Y. CORDIER,
1,3 P. MISKA,
1 and D. FERRE2
1.—Institut d’Electronique et de Microélectronique du Nord, U.M.R.-C.N.R.S 8520,
Avenue Poincaré, Université de Lille 1, BP 69, 59652 Villeneuve d’Ascq Cedex, France.
2.—Laboratoire Structure et Propriétés de l’Etat Solide, URA 234, Université de Lille 1,
59650 Villeneuve d’Ascq, France. 3.—e-mail: yvon.cordier@iemn.univ-lille1.fr
InAs islands self-assembled on InAlAs layers lattice mismatched on GaAs
substrates have been grown by molecular beam epitaxy. Both pseudomorphic
and metamorphic InAlAs buffer layers were used as a template to investigate the
effects of strain relaxation on the formation of the islands. The effect of alloy
composition in the metamorphic templates is shown on the density and the shape
of …