X Z Shang1,3
,SDWu2
, C Liu1
,WXWang2
, LWGuo2
, Q Huang2
and J M Zhou2
1
School of Physics and Technology, Wuhan University, Wuhan 430072, Hubei, People’s
Republic of China
2
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of
Sciences, Beijing 100080, People’s Republic of China
E-mail: xunzhong@acc-lab.whu.edu.cn
Received 8 December 2005
Published 20 April 2006
Online at stacks.iop.org/JPhysD/39/1800
Abstract
Low-temperature step-graded InAlAs metamorphic buffer layers on GaAs
substrate grown by molecular beam epitaxy were investigated. The strain
relaxation and the composition of the top InAlAs layer were determined by
high-resolution triple-axis x-ray diffraction measurements, which show that
the top InAlAs layer is nearly fully relaxed. Surface morphology was
observed by reflection high-energy electron diffraction pattern and …