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–
10] direction of
the surface when the indium content in the buffer
layer is increased. The long lines that appears on the
surface of the metamorphic buffers are 10 nm deep
steps with {411}A facets; these facets have been gen-
erated by surface step bunching during the growth of
the InAlAs uniform composition layer at 500°C. Any
island forms on these facets but chains of islands
appear at the edges of these steps as shown in Fig. 7a
and b. This phenomena is not specific to this material
system.
10 On the 52% In content buffers we observe
the formation of wires parallel to the [1